Description
BLF10M6135; BLF10M6LS135 Power LDMOS transistor Rev.1 * 24 June 2014 Product data sheet 1.Product profile 1.1 General .
135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz.
Features
* Easy power control
* Integrated ESD protection
* Enhanced ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (700 MHz to 1000 MHz)
* Internally matched for ease of use
* Compliant to Directive 2002/95/EC, regarding restrict
Applications
* at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Test signal
f
VDS
PL(AV)
Gp
D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
869 to 894
28 26.5
21.0 28.0
ACPR (dBc) 39[1]
[1] Test signal:
