Datasheet Specifications
- Part number
- BLF369
- Manufacturer
- NXP ↗
- File Size
- 172.52 KB
- Datasheet
- BLF369_PhilipsSemiconductors.pdf
- Description
- VHF power LDMOS transistor
Description
www.DataSheet4U.com BLF369 VHF power LDMOS transistor Rev.01 * 13 April 2006 Objective data sheet 1.Product profile 1.1 General .
Features
* I Typical CW performance at 225 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 1.0 A: N Load power PL = 500 W N Gain Gp ≥ 18 dB N Drain efficiency ηD = 60 % I Advanced flange material for optimum thermal behavior and reliability I Excellent ruggedness I High power gainApplications
* and industrial applications in the HF/VHF band. Table 1: Typical performance Typical RF performance at VDS = 32 V and Th = 25 °C in a common-source 225 MHz test circuit. [1] Mode of operation CW, class AB 2-tone, class AB [1] f (MHz) 225 f1 = 225; f2 = 225.1 PL (W) 500 - PL(PEP) (W) 500 Gp (dB) 1BLF369 Distributors
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