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BLF988 - Power LDMOS transistor

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NXP

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BLF988 Power LDMOS transistor by NXP - Datasheet Preview — Datasheet preview – BLF988

Datasheet Details

Part number	BLF988
Manufacturer	NXP
File Size	229.05 KB
Description	Power LDMOS transistor
Datasheet	BLF988 Datasheet
Additional preview pages of the BLF988 datasheet.

Product details

Description

A 600 W LDMOS RF power transistor for transmitter applications and industrial applications.

Features

Excellent ruggedness (VSWR  40 : 1 through all phases).
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
High power gain.
High efficiency.
Designed for broadband operation (400 MHz to 1000 MHz).
Internal input matching for high gain and optimum broadband operation.
Excellent reliability.
Easy power control.
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Published: Jan 27, 2016 |