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BLF9G38-10G Power LDMOS transistor

BLF9G38-10G Description

BLF9G38-10G Power LDMOS transistor Rev.1 * 19 October 2017 Product data sheet 1.Product profile 1.1 General .
10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.

BLF9G38-10G Features

* High efficiency
* Integrated ESD protection
* Excellent ruggedness
* Excellent thermal stability
* Designed for broadband operation
* Internally matched for ease of use
* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applic

BLF9G38-10G Applications

* at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 3400 to 3600 70 28 2 17.7 26 30 [1] [

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Datasheet Details

Part number
BLF9G38-10G
Manufacturer
Ampleon
File Size
464.77 KB
Datasheet
BLF9G38-10G-Ampleon.pdf
Description
Power LDMOS transistor

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Power LDMOS transistor Ampleon
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