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BLF988S, BLF988 Power LDMOS transistor

BLF988S Description

BLF988; BLF988S Power LDMOS transistor Rev.2 * 1 August 2013 Product data sheet 1.Product profile 1.1 General .
A 600 W LDMOS RF power transistor for transmitter applications and industrial applications.

BLF988S Features

* Excellent ruggedness (VSWR  40 : 1 through all phases)
* Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
* High power gain
* High efficiency
* Designed for broadband operation (400 MHz to 1000 MHz)
* Internal input matching for high gain and optimum broadband

BLF988S Applications

* and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information Test signal f (MHz) PL(AV) (W) PL(M) (W) Gp D IMD3 (dB) (%) (dBc) RF performance in a common source 860 MHz narrowband test ci

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This datasheet PDF includes multiple part numbers: BLF988S, BLF988. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
BLF988S, BLF988
Manufacturer
NXP ↗
File Size
229.05 KB
Datasheet
BLF988-NXP.pdf
Description
Power LDMOS transistor
Note
This datasheet PDF includes multiple part numbers: BLF988S, BLF988.
Please refer to the document for exact specifications by model.

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