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BLF988S - Power LDMOS transistor

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NXP

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BLF988S Power LDMOS transistor by NXP - Datasheet Preview — Datasheet preview – BLF988S

Datasheet Details

Part number	BLF988S
Manufacturer	NXP
File Size	229.05 KB
Description	Power LDMOS transistor
Datasheet	BLF988S Datasheet
Note	This datasheet PDF includes multiple part numbers: BLF988S, BLF988. Please refer to the document for exact specifications by model.
Additional preview pages of the BLF988S datasheet.

Product details

Description

A 600 W LDMOS RF power transistor for transmitter applications and industrial applications.

Features

Excellent ruggedness (VSWR  40 : 1 through all phases).
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
High power gain.
High efficiency.
Designed for broadband operation (400 MHz to 1000 MHz).
Internal input matching for high gain and optimum broadband operation.
Excellent reliability.
Easy power control.
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Published: Jan 27, 2016 |