BLF9G38LS-90P Power LDMOS transistor

NXP

Description

BLF9G38LS-90P Power LDMOS transistor Rev.2 * 3 July 2015 Product data sheet 1.Product profile 1.1 General .
90 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.

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Datasheet Specifications

Part number: BLF9G38LS-90P
Manufacturer: NXP ↗
File Size: 175.61 KB
Datasheet: BLF9G38LS-90P-NXP.pdf
Description: Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability

Applications

* at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty application demo circuit. Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) IS-95 3400 to 3600 28 15.1 12.7 37.0 ACPR (dBc) 37 [1] [1] Test signal: IS-95;

BLF9G38LS-90P Distributors

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BLF9G38LS-90P Power LDMOS transistor NXP

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