BLF9G38LS-90P

Power LDMOS transistor

NXP

BLF9G38LS-90P Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memory effects providing excellent pre-distortability

* Internally matched fo

BLF9G38LS-90P General Description

90 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty application demo circuit. Test signal f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) IS-95 3400 to 3600 28 15.

BLF9G38LS-90P Datasheet (175.61 KB)

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