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BLS7G2729LS-350P

LDMOS S-band radar power transistor

BLS7G2729LS-350P Features

* High efficiency

* Excellent ruggedness

* Designed for S-band operation (2.7 GHz to 2.9 GHz)

* Excellent thermal stability

* Easy power control

* Integrated ESD protection

* High flexibility with respect to pulse formats

* Internally matched for ease of use

* Com

BLS7G2729LS-350P General Description

350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 200 mA; in a class-AB production test circuit. Test signal f VDS PL Gp D tr tf (GHz.

BLS7G2729LS-350P Datasheet (134.18 KB)

Preview of BLS7G2729LS-350P PDF

Datasheet Details

Part number:

BLS7G2729LS-350P

Manufacturer:

NXP ↗

File Size:

134.18 KB

Description:

Ldmos s-band radar power transistor.
BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 5

* 16 May 2014 Product data sheet 1. Product profile 1.1 Genera.

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BLS7G2729LS-350P LDMOS S-band radar power transistor NXP

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