Datasheet4U Logo Datasheet4U.com

BLS7G2729LS-350P, BLS7G2729L-350P LDMOS S-band radar power transistor

BLS7G2729LS-350P Description

BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev.5 * 16 May 2014 Product data sheet 1.Product profile 1.1 Genera.
350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.

BLS7G2729LS-350P Features

* High efficiency
* Excellent ruggedness
* Designed for S-band operation (2.7 GHz to 2.9 GHz)
* Excellent thermal stability
* Easy power control
* Integrated ESD protection
* High flexibility with respect to pulse formats
* Internally matched for ease of use
* Com

BLS7G2729LS-350P Applications

* in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 200 mA; in a class-AB production test circuit. Test signal f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 2.7 to 2.9 32 35

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: BLS7G2729LS-350P, BLS7G2729L-350P. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
BLS7G2729LS-350P, BLS7G2729L-350P
Manufacturer
NXP ↗
File Size
134.18 KB
Datasheet
BLS7G2729L-350P-NXP.pdf
Description
LDMOS S-band radar power transistor
Note
This datasheet PDF includes multiple part numbers: BLS7G2729LS-350P, BLS7G2729L-350P.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

📌 All Tags

LDMOS S-band radar power transistor NXP
NXP BLS7G2729LS-350P-like datasheet