BUK481-100A PowerMOS transistor

NXP

Description

Philips Semiconductors Product Specification PowerMOS transistor BUK481-100A GENERAL .
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.

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Datasheet Specifications

Part number: BUK481-100A
Manufacturer: NXP ↗
File Size: 71.38 KB
Datasheet: BUK481-100A_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

Applications

* The device is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 10 V MAX. 100 1.0 1.5 1

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BUK481-100A PowerMOS transistor NXP

NXP BUK481-100A-like datasheet