BUK481-60A Datasheet - NXP

BUK481-60A, PowerMOS transistor

Philips Semiconductors Product specification PowerMOS transistor BUK481-60A GENERAL DESCRIPTION N-channel enhancement mode field-effect power tran

Applications

* The device is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 10 V MAX. 60 1.6 1.5 15

BUK481-60A_PhilipsSemiconductors.pdf