BUK483-60A Datasheet - NXP

BUK483-60A, PowerMOS transistor

Philips Semiconductors Product specification PowerMOS transistor BUK483-60A GENERAL DESCRIPTION N-channel enhancement mode field-effect power tran

Applications

* The device is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 10 V MAX. 60 3.2 1.8 15

BUK483-60A_PhilipsSemiconductors.pdf