BUK482-100A Datasheet - NXP

BUK482-100A, PowerMOS transistor

Philips Semiconductors Product Specification PowerMOS transistor BUK482-100A GENERAL DESCRIPTION N-channel enhancement mode field-effect power tra

Applications

* The device is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 10 V MAX. 100 1.8 1.8 1

BUK482-100A_PhilipsSemiconductors.pdf