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BUK554-200A - PowerMOS transistor Logic level FET

BUK554-200A Description

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

BUK554-200A Applications

* BUK554-200A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK554 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. -200A 200 9.2 90 175 0.4 MAX. -200B 200 8.2 90 175 0.5 UNIT V A W ˚C Ω PINNING -

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PowerMOS transistor Logic level FET NXP
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