BUK554-200A Datasheet - NXP

BUK554-200A, PowerMOS transistor Logic level FET

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

Applications

* BUK554-200A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK554 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. -200A 200 9.2 90 175 0.4 MAX. -200B 200 8.2 90 175 0.5 UNIT V A W ˚C Ω PINNING -

BUK554-200A_PhilipsSemiconductors.pdf