BUK552-100A Datasheet - NXP

BUK552-100A, PowerMOS transistor

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

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BUK552-100A_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

BUK552-100A

Manufacturer:

NXP ↗

File Size:

56.30 KB

Description:

PowerMOS transistor

Applications

* BUK552-100A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK552 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. -100A 100 10 60 175 0.28 MAX. -100B 100 8.5 60 175 0.35 UNIT V A W ˚C Ω PINNING

BUK552-100A Distributors

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BUK552-100A PowerMOS transistor NXP

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