BUK552-100A PowerMOS transistor

NXP

Description

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

📥 Download Datasheet

BUK552-100A Datasheet Preview — Preview of BUK552-100A PDF

Datasheet Specifications

Part number: BUK552-100A
Manufacturer: NXP ↗
File Size: 56.30 KB
Datasheet: BUK552-100A_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

Applications

* BUK552-100A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK552 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. -100A 100 10 60 175 0.28 MAX. -100B 100 8.5 60 175 0.35 UNIT V A W ˚C Ω PINNING

BUK552-100A Distributors

📁 Related Datasheet

BUK555-100A BUK555-100B BUK118-50DL BUK127-50GT BUK138-50DL BUK139-50DL

📌 All Tags

BUK552-100A PowerMOS transistor NXP

NXP BUK552-100A-like datasheet