BUK552-100B PowerMOS transistor

NXP

Description

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

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Datasheet Specifications

Part number: BUK552-100B
Manufacturer: NXP ↗
File Size: 56.30 KB
Datasheet: BUK552-100B_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

Applications

* BUK552-100A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK552 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. -100A 100 10 60 175 0.28 MAX. -100B 100 8.5 60 175 0.35 UNIT V A W ˚C Ω PINNING

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📁 Related Datasheet

BUK555-100A BUK555-100B BUK118-50DL BUK127-50GT BUK138-50DL BUK139-50DL

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BUK552-100B PowerMOS transistor NXP

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