BUK552-60B PowerMOS transistor

NXP

Description

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

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Datasheet Specifications

Part number: BUK552-60B
Manufacturer: NXP ↗
File Size: 55.47 KB
Datasheet: BUK552-60B_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

Applications

* BUK552-60A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK552 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. -60A 60 14 60 175 0.15 MAX. -60B 60 13 60 175 0.18 UNIT V A W ˚C Ω PINNING - TO22

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BUK552-60B PowerMOS transistor NXP

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