BUK552-60B Datasheet - NXP

BUK552-60B, PowerMOS transistor

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

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BUK552-60B_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

BUK552-60B

Manufacturer:

NXP ↗

File Size:

55.47 KB

Description:

PowerMOS transistor

Applications

* BUK552-60A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK552 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. -60A 60 14 60 175 0.15 MAX. -60B 60 13 60 175 0.18 UNIT V A W ˚C Ω PINNING - TO22

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BUK552-60B PowerMOS transistor NXP

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