BUK553-48C Datasheet - NXP

BUK553-48C, PowerMOS transistor

Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET GENERAL .
Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

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BUK553-48C_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

BUK553-48C

Manufacturer:

NXP ↗

File Size:

69.73 KB

Description:

PowerMOS transistor

Applications

* It has built-in zener diodes providing active drain voltage clamping. BUK553-48C QUICK REFERENCE DATA SYMBOL V(CL)DSR ID Ptot Tj WDSRR RDS(ON) PARAMETER Drain-source clamp voltage Drain current (DC) Total power dissipation Junction temperature Repetitive clamped turn off energy; Tj = 150˚C Drain-

BUK553-48C Distributors

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BUK553-48C PowerMOS transistor NXP

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