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BUK553-48C PowerMOS transistor

BUK553-48C Description

Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET GENERAL .
Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

BUK553-48C Applications

* It has built-in zener diodes providing active drain voltage clamping. BUK553-48C QUICK REFERENCE DATA SYMBOL V(CL)DSR ID Ptot Tj WDSRR RDS(ON) PARAMETER Drain-source clamp voltage Drain current (DC) Total power dissipation Junction temperature Repetitive clamped turn off energy; Tj = 150˚C Drain-

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