BUK553-60B PowerMOS transistor

NXP

Description

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

📥 Download Datasheet

BUK553-60B Datasheet Preview — Preview of BUK553-60B PDF

Datasheet Specifications

Part number: BUK553-60B
Manufacturer: NXP ↗
File Size: 54.17 KB
Datasheet: BUK553-60B_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

Applications

* BUK553-60A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK553 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. -60A 60 21 75 175 0.085 MAX. -60B 60 20 75 175 0.10 UNIT V A W ˚C Ω PINNING - TO2

BUK553-60B Distributors

📁 Related Datasheet

BUK555-100A BUK555-100B BUK118-50DL BUK127-50GT BUK138-50DL BUK139-50DL

📌 All Tags

BUK553-60B PowerMOS transistor NXP

NXP BUK553-60B-like datasheet