BUK553-100B Datasheet - NXP

BUK553-100B, PowerMOS transistor

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

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BUK553-100B_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

BUK553-100B

Manufacturer:

NXP ↗

File Size:

56.64 KB

Description:

PowerMOS transistor

Applications

* BUK553-100A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK553 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. -100A 100 13 75 175 0.18 MAX. -100B 100 12 75 175 0.22 UNIT V A W ˚C Ω PINNING -

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BUK553-100B PowerMOS transistor NXP

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