BUK553-100A PowerMOS transistor

NXP

Description

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

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Datasheet Specifications

Part number: BUK553-100A
Manufacturer: NXP ↗
File Size: 56.64 KB
Datasheet: BUK553-100A_PhilipsSemiconductors.pdf
Description: PowerMOS transistor

Applications

* BUK553-100A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK553 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. -100A 100 13 75 175 0.18 MAX. -100B 100 12 75 175 0.22 UNIT V A W ˚C Ω PINNING -

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BUK553-100A PowerMOS transistor NXP

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