BUT12AI Silicon Diffused Power Transistor

NXP

Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL .
Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited for use in overhead/high frequency ligh.

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Datasheet Specifications

Part number: BUT12AI
Manufacturer: NXP ↗
File Size: 65.30 KB
Datasheet: BUT12AI_PhilipsSemiconductors.pdf
Description: Silicon Diffused Power Transistor

Applications

* and converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissip

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