BUT12AI Datasheet - NXP

BUT12AI, Silicon Diffused Power Transistor

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL .
Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited for use in overhead/high frequency ligh.

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BUT12AI_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

BUT12AI

Manufacturer:

NXP ↗

File Size:

65.30 KB

Description:

Silicon Diffused Power Transistor

Applications

* and converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissip

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