Datasheet Details
- Part number
- BUT12XI
- Manufacturer
- NXP ↗
- File Size
- 59.22 KB
- Datasheet
- BUT12XI_PhilipsSemiconductors.pdf
- Description
- Silicon Diffused Power Transistor
BUT12XI Description
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12XI GENERAL .
Improved high-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope specially suited for overhead/high frequency l.
BUT12XI Applications
* and converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissip
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