BUT211 Silicon Diffused Power Transistor

NXP

Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL .
Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting.

📥 Download Datasheet

BUT211 Datasheet Preview — Preview of BUT211 PDF

Datasheet Specifications

Part number: BUT211
Manufacturer: NXP ↗
File Size: 70.82 KB
Datasheet: BUT211_PhilipsSemiconductors.pdf
Description: Silicon Diffused Power Transistor

Applications

* QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Inductive fall time CONDITIONS VBE = 0

BUT211 Distributors

📁 Related Datasheet

BUT21B BUT21BF BUT21C BUT21CF BUT232V BUT100

📌 All Tags

BUT211 Silicon Diffused Power Transistor NXP

NXP BUT211-like datasheet