BUT211X Silicon Diffused Power Transistor

NXP

Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211X GENERAL .
Enhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelope specially suited for high frequency electron.

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Datasheet Specifications

Part number: BUT211X
Manufacturer: NXP ↗
File Size: 57.93 KB
Datasheet: BUT211X_PhilipsSemiconductors.pdf
Description: Silicon Diffused Power Transistor

Applications

* QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Inductive fall time CONDITIONS VBE = 0

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BUT211X Silicon Diffused Power Transistor NXP

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