Datasheet4U Logo Datasheet4U.com

BUT21BF - Silicon NPN Power Transistor

BUT21BF Description

INCHANGE Semiconductor isc Silicon NPN Power Transistors .
Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)- BUT21BF 450V(Min)- BUT21CF. High Switching Speed APPLICATIONS. Designed fo.

BUT21BF Applications

* Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 BUT21BF BUT21CF 750 850 V VCEO Collector-Emitter Voltage BUT21BF BUT21CF 400 450 V VEBO

📥 Download Datasheet

Preview of BUT21BF PDF
datasheet Preview Page 2

Datasheet Details

Part number
BUT21BF
Manufacturer
Inchange Semiconductor
File Size
187.81 KB
Datasheet
BUT21BF-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • BUT211 - Silicon Diffused Power Transistor (NXP)
  • BUT211X - Silicon Diffused Power Transistor (NXP)
  • BUT232V - NPN TRANSISTOR POWER MODULE (STMicroelectronics)
  • BUT100 - HIGH POWER NPN SILICON TRANSISTOR (STMicroelectronics)
  • BUT11 - Silicon diffused power transistors (NXP)
  • BUT11A - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (STMicroelectronics)
  • BUT11AF - High Voltage NPN Power Transistor (Motorola Inc)
  • BUT11AI - Silicon Diffused Power Transistor (NXP)

📌 All Tags

Inchange Semiconductor BUT21BF-like datasheet