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BUT21B - Silicon NPN Power Transistor

BUT21B Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)- BUT21B 450V(Min)- BUT21C. High Switching Speed APPLICATIONS. Designed for.

BUT21B Applications

* Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 BUT21B BUT21C 750 850 V VCEO BUT21B Collector-Emitter Voltage BUT21C 400 450 V VEBO Emit

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Datasheet Details

Part number
BUT21B
Manufacturer
Inchange Semiconductor
File Size
185.26 KB
Datasheet
BUT21B-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BUT21B-like datasheet