BUT21B Datasheet - Inchange Semiconductor

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BUT21B Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)- BUT21B 450V(Min)- BUT21C. High Switching Speed APPLICATIONS. Designed for.

BUT21B-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

BUT21B

Manufacturer:

Inchange Semiconductor

File Size:

185.26 KB

Description:

Silicon NPN Power Transistor

Applications

* Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 BUT21B BUT21C 750 850 V VCEO BUT21B Collector-Emitter Voltage BUT21C 400 450 V VEBO Emit

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