BUT21B Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)- BUT21B 450V(Min)- BUT21C. High Switching Speed APPLICATIONS. Designed for.

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Datasheet Specifications

Part number: BUT21B
Manufacturer: Inchange Semiconductor
File Size: 185.26 KB
Datasheet: BUT21B-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 BUT21B BUT21C 750 850 V VCEO BUT21B Collector-Emitter Voltage BUT21C 400 450 V VEBO Emit

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Silicon NPN Power Transistor Inchange Semiconductor

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