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MW7IC2220GNR1 - Power Amplifier

This page provides the datasheet information for the MW7IC2220GNR1, a member of the MW7IC2220NR1 Power Amplifier family.

Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
  • On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. Document Number: MW7IC2220N Rev. 2.

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Datasheet preview – MW7IC2220GNR1

Datasheet Details

Part number MW7IC2220GNR1
Manufacturer NXP
File Size 1.67 MB
Description Power Amplifier
Datasheet download datasheet MW7IC2220GNR1 Datasheet
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Full PDF Text Transcription

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Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on--chip matching that makes it usable from 2000 to 2200 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD--SCDMA. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 = 80 mA, IDQ2 = 300 mA, Pout = 2 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 31 dB Power Added Efficiency — 13% ACPR @ 5 MHz Offset — --50 dBc in 3.84 MHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 20 Watts CW Output Power • Stable into a 5:1 VSWR.
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