MW7IC2220GNR1, MW7IC2220NR1 Datasheet - NXP

MW7IC2220GNR1 Power Amplifier

Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2220N wideband integrated circuit is designed with on chip matching that makes it usable from 2000 to 2200 MHz. This multi stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD SCDMA. Typical Single Carrier W CDMA Performance: VDD = 28 Volts, IDQ1 = 80 mA, IDQ2 = 300 mA, Pout = 2.

MW7IC2220GNR1 Features

* Characterized with Series Equivalent Large

* Signal Impedance Parameters and Common Source S

* Parameters

* On

* Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1

MW7IC2220NR1-NXP.pdf