PBSS8110S - NPN low VCEsat (BISS) transistor

NXP

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Datasheet Details

Part number	PBSS8110S
Manufacturer	NXP ↗
File Size	80.09 KB
Description	NPN low VCEsat (BISS) transistor
Datasheet	PBSS8110S_PhilipsSemiconductors.pdf

PBSS8110S Product details

Description

NPN low VCEsat BISS transistor in a SOT54 plastic package. DESCRIPTION MARKING CODE S8110S 1 handbook, halfpage 2 3 PBSS8110S QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base collector emitter DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.100 1 3 200 UNIT V A A mΩ 2 1 3 MAM259 Fig.1 Simplified outlin

Features

SOT54 package.
Low collector-emitter saturation voltage VCEsat.
High collector current capability: IC and ICM.
Higher efficiency leading to less heat generation.

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Published: Nov 17, 2006 |