PBSS8110T Datasheet - NXP

PBSS8110T NPN low VCEsat (BISS) transistor

NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS9110T. MARKING TYPE NUMBER PBSS8110T Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. ORDERING INFORMATION TYPE NUMBER PBSS8110T PACKAGE NAME * DESCRIPTION plastic surface mounted pac.

PBSS8110T Features

* SOT23 package

* Low collector-emitter saturation voltage VCEsat

* High collector current capability: IC and ICM

* Higher efficiency leading to less heat generation

* Reduced printed-circuit board requirements. APPLICATIONS

* Major application segment

PBSS8110T Datasheet (158.70 KB)