Datasheet Details
Part number:
PBSS8110T
Manufacturer:
File Size:
158.70 KB
Description:
NPN low VCEsat (BISS) transistor
Features
* SOT23 package
* Low collector-emitter saturation voltage VCEsat
* High collector current capability: IC and ICM
* Higher efficiency leading to less heat generation
* Reduced printed-circuit board requirements. APPLICATIONS
* Major application segment
PBSS8110T_PhilipsSemiconductors.pdf
PBSS8110T, NPN low VCEsat (BISS) transistor
NPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: PBSS9110T.
MARKING TYPE NUMBER PBSS8110T Note 1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
ORDERING INFORMATION TYPE NUMBER PBSS8110T PACKAGE NAME * DESCRIPTION plastic surface mounted pac
PBSS8110T Distributor
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