PBSS8110T

NPN low VCEsat (BISS) transistor

NXP

PBSS8110T Features

* SOT23 package

* Low collector-emitter saturation voltage VCEsat

* High collector current capability: IC and ICM

* Higher efficiency leading to less heat generation

* Reduced printed-circuit board requirements. APPLICATIONS

* Major application segment

PBSS8110T General Description

NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS9110T. MARKING TYPE NUMBER PBSS8110T Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China. ORDERING INFORMATION TYPE NUMBER PBSS8110T PACKAGE NAME

* DESCRIPTION plastic surface mounted pac.

PBSS8110T Datasheet (158.70 KB)

PBSS8110T Datasheet Preview — Preview of PBSS8110T PDF

Datasheet Details

Part number:

PBSS8110T

Manufacturer:

NXP ↗

File Size:

158.70 KB

Description:

Npn low vcesat (biss) transistor.
www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat (BISS) transistor Product speciﬁc.

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PBSS8110T NPN low VCEsat BISS transistor NXP

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PBSS8110T Features

PBSS8110T General Description

Datasheet Details

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