* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadl
PBSS8510PA Datasheet (201.32 KB)
PBSS8510PA
201.32 KB
5.2a npn transistor.
www.DataSheet4U.com PBSS8510PA 100 V, 5.2 A NPN low VCEsat (BISS) transistor Rev. 1 17 May 2010 Product data sheet 1. Product profile 1.1 .
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