PESD5V0L7BS - Low Capacitance 7-fold Bi-directional Esd Protection Diode Array

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PESD5V0L7BS Low Capacitance 7-fold Bi-directional Esd Protection Diode Array by NXP - Datasheet Preview — Datasheet preview – PESD5V0L7BS

Datasheet Details

Part number	PESD5V0L7BS
Manufacturer	NXP
File Size	131.74 KB
Description	Low Capacitance 7-fold Bi-directional Esd Protection Diode Array
Datasheet	PESD5V0L7BS Datasheet
Additional preview pages of the PESD5V0L7BS datasheet.

Product details

Description

www.DataSheet4U.com PESD5V0L7BS QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse stand-off voltage diode capacitance; VR = 0 V; f = 1 MHz number of protected lines PINNING PIN 1, 2, 3, 4, 5, 6, 7, 8 DESCRIPTION cathodes VALUE 5 8 7 UNIT V pF 1 2 3 4 001aaa389 8 7 6 5 1 2 3 4 8 7 6 5 Low capacitance 7-fold bi-directional ESD protection diode array in a small SO8 plastic package, designed to protect up to seven transmission or data lines from ElectroStatic Discharge (ESD) damage.MARKI

Features

Bi-directional ESD protection of up to 7 lines.
Low diode capacitance.
Max. peak pulse power: Ppp = 35 W at tp = 8/20 µs.
Low clamping voltage: V(CL)R = 17 V at Ipp = 2.5 A.
Ultra low leakage current: IRM = 3 nA at VRWM = 5 V.
ESD protection: >10 kV.
IEC 61000-4-2; level 4 (ESD).
IEC 61000-4-5; (surge): Ipp = 2.5 A at tp = 8/20 µs.

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Published: Jun 20, 2007 |