PHD18NQ10T

N-Channel Transistor

NXP

PHD18NQ10T Features

* ’Trench’ technology

* Low on-state resistance

* Fast switching

* Low thermal resistance SYMBOL VDSS = 100 V ID = 18 A g RDS(ON) ≤ 90 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology

PHD18NQ10T General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:

* d.c. to d.c. converters

* switched mode power supplies The PHP18NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB18NQ10T is supplied in.

PHD18NQ10T Datasheet (121.82 KB)