PHT8N06LT TrenchMOS transistor Logic level FET

NXP

Description

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.

📥 Download Datasheet

PHT8N06LT Datasheet Preview — Preview of PHT8N06LT PDF

Datasheet Specifications

Part number: PHT8N06LT
Manufacturer: NXP ↗
File Size: 64.12 KB
Datasheet: PHT8N06LT_PhilipsSemiconductors.pdf
Description: TrenchMOS transistor Logic level FET

Applications

* PHT8N06LT QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 7.5 1.8 150 80 UNIT V A W ˚C mΩ PINNING - SOT223 PIN 1 2 3 4 gate drain source drain (tab) DES

PHT8N06LT Distributors

📁 Related Datasheet

PHT PHT-10x-xx-L-x PHT-11x-xx-L-x PHT-12x-xx-L-x PHT-13x-xx-L-x PHT-14x-xx-L-x

📌 All Tags

PHT8N06LT TrenchMOS transistor Logic level FET NXP

NXP PHT8N06LT-like datasheet