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PMDPB80XP MOSFET

PMDPB80XP Description

PMDPB80XP ') 1   20 V, dual P-channel Trench MOSFET Rev.1 * 30 May 2012 Product data sheet 1.Product profile 1.1 General .
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plas.

PMDPB80XP Features

* 1.8 V RDSon rated for low voltage gate drive
* Trench MOSFET technology
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

PMDPB80XP Applications

* Charging switch for portable devices
* DC/DC converters
* Small brushless DC motor drive
* Power management in battery-driven portables
* Hard disc and computing power management 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate

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