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PMDPB85UPE 20V dual P-channel Trench MOSFET

PMDPB85UPE Description

PMDPB85UPE 020 -6 20 V dual P-channel Trench MOSFET Rev.1 * 20 June 2012 Product data sheet 1.Product profile 1.1 General .
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD).

PMDPB85UPE Features

* Low threshold voltage
* Very fast switching
* Trench MOSFET technology

PMDPB85UPE Applications

* Relay driver
* High-speed line driver
* High-side load switch
* Switching circuits 1.4 Quick reference data Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s V

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