NT5DS16M16BW Datasheet - Nanya Techology

NT5DS16M16BW (NT5DSxxMxBx) 256Mb DDR SDRAM

The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. The DDR SDRAM provides for programmable Read or Write burst lengths of 2, 4, or 8 locations. An Auto Precharge function may be enabled to provide a sel.

NT5DS16M16BW Features

* CAS Latency and Frequency Maximum Operating Frequency (MHz)

* DDR333 DDR266B (-6K)

* (-75B) 2 133 100 2.5 166 133

* -6K also meets DDR266A Spec (MHz-CL-tRCD-tRP = 133-2-3-3) CAS Latency

NT5DS16M16BW Datasheet (1.87 MB)