2SB1477
New Jersey Semi-Conductor
90.61kb
Silicon pnp power transistor. * Collector-Emitter Breakdown Voltage: V(BR)CEo=-100V(Min.) * Wide Area of Safe Operation * Complement to Type 2SD2236 * -^ ^ j : j
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Silicon PNP triple diffusion planar type darlington
Unit: mm
(10.0) (6.0) (2.0) (4.0)
For power amplification Complementar.
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DESCRIPTION ·With TO-3PL package ·Complemen.
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Ordering number:EN3365
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· Motor drivers, printer hammer.
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Super miniature package. High DC current IC(DC)=500mA max. Low VCE(sat): V.
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