2SB850
New Jersey Semi-Conductor
153.93kb
General purpose power amplifier.
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2SB850 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -40V(Min) ·Low Collector-Emitter Saturation Voltage-
:.
2SB851 - PNP Silicon Transistor
(Rohm)
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This Material Copyrighted By Its Respective Manuf.
2SB852 - Transistor
(TY Semiconductor)
Product specification
2SB852
■ Features
● Darlington connection for high DC current gain. ● Built-in 4kΩ resistor between base and emitter.
+0.1 2.4-.
2SB852K - High-gain Amplifier Transistor
(Rohm)
Transistors
2SB852K
High-gain Amplifier Transistor (−32V, −0.3A)
2SB852K
zFeatures 1) Darlington connection for high DC current gain. 2) Built-in .
2SB855 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB855
DESCRIPTION ·With TO-220C package ·Low colle.
2SB855 - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
2SB855
DESCRIPTION ·Collector Current: IC= -2A ·Low Collector Saturation Voltage
: VCE(sat)= -1.2V(Max)@IC= -2A ·Hi.
2SB856 - Silicon PNP Transistor
(Hitachi Semiconductor)
.
2SB856 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB856
DESCRIPTION ·With TO-220C package ·Low colle.
2SB856 - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
2SB856
DESCRIPTION ·Collector Current: IC= -3A ·Low Collector Saturation Voltage
: VCE(sat)= -1.2V(Max)@IC= -2A ·Hi.
2SB857 - Silicon PNP Transistor
(Hitachi Semiconductor)
2SB857, 2SB858
Silicon PNP Triple Diffused
Application
Low frequency power amplifier plementary pair with 2SD1133 and 2SD1134
Outline
TO-220AB
1.
