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2SB1502, 2SB1502_NewJerseySemi Silicon PNP Darlington Power Transistor

2SB1502 Description

C/ J.TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE.SPRINGFIELD, NEW JERSEY 07081 U.S.A.Silicon PNP Darlington Power T.
High DC Current Gain: hFE= 5000(Min)@lc= -4A. Low-Collector Saturation Voltage: VCE(satr -2. Complement t.

2SB1502 Applications

* Designed for power amplifier applications
* Optimum for 55W HiFi output applications. in .
* T ABSOLUTE MAXIMUM RATINGS(Ta=25x:) SYMBOL PARAMETER VALUE UNIT D A VCBO Collector-Base Voltage -120 V uWf U iW !'-
* M VCEO Collector-Emitter Voltage -100 V VEBO E

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This datasheet PDF includes multiple part numbers: 2SB1502, 2SB1502_NewJerseySemi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
2SB1502, 2SB1502_NewJerseySemi
Manufacturer
New Jersey Semi-Conductor
File Size
96.73 KB
Datasheet
2SB1502_NewJerseySemi-Conductor.pdf
Description
Silicon PNP Darlington Power Transistor
Note
This datasheet PDF includes multiple part numbers: 2SB1502, 2SB1502_NewJerseySemi.
Please refer to the document for exact specifications by model.

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Silicon PNP Darlington Power Transistor New Jersey Semi-Conductor
New Jersey Semi-Conductor 2SB1502-like datasheet