Datasheet4U Logo Datasheet4U.com

2SB1507

Silicon PNP Power Transistor

2SB1507 General Description



* Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@lc= -4A

* Good Linearity of hFE

* Wide Area of Safe Operation

* Complement to Type 2SD2280 IH I I I | I | III ' PIN 1 BASE 2. COLLECTOR 3. EMITTER TO-3PML package APPLICATIONS

* Designed for relay d.

2SB1507 Datasheet (95.04 KB)

Preview of 2SB1507 PDF

Datasheet Details

Part number:

2SB1507

Manufacturer:

New Jersey Semi-Conductor

File Size:

95.04 KB

Description:

Silicon pnp power transistor.
, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2.

📁 Related Datasheet

2SB1502 - Silicon PNP Transistor (Panasonic Semiconductor)
Power Transistors 2SB1502 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 6.0 20.0±0.5 φ 3.3±0.2 5.0±0..

2SB1502 - Silicon PNP Darlington Power Transistor (New Jersey Semi-Conductor)
C/ J. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Darlington Power T.

2SB1502 - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -4A ·Low-Collector Saturation Voltage- : VCE(sat).

2SB1503 - Silicon PNP Transistor (Panasonic Semiconductor)
Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276 6.0 20.0±0.5 φ 3.3±0.2 5.0±0..

2SB1503 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB1503 DESCRIPTION ·With TO-3PL package ·Complemen.

2SB1503 - Silicon PNP Darlington Power Transistor (New Jersey Semi-Conductor)
, One. 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power T.

2SB1503 - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -7A ·Low-Collector Saturation Voltage- : VCE(sat).

2SB1504 - Silicon PNP epitaxial planar type darlington (Panasonic)
Power Transistors 2SB1504 Silicon PNP epitaxial planar type darlington Unit: mm For power switching • High forward current transfer ratio hFE • High.

TAGS

2SB1507 Silicon PNP Power Transistor New Jersey Semi-Conductor

Image Gallery

2SB1507 Datasheet Preview Page 2

2SB1507 Distributor