Part number:
FDB9503L-F085
Manufacturer:
File Size:
440.95 KB
Description:
P-channel power mosfet.
* Typical RDS(on) = 2.0 mΩ at VGS = - 10V, ID = - 80 A
* Typical Qg(tot) = 196 nC at VGS = - 10V, ID = - 80 A
* UIS Capability
* RoHS Compliant
* Qualified to AEC Q101 GS TO-263AB FDB SERIES Applications
* Automotive Engine Control
* PowerTr
FDB9503L-F085 Datasheet (440.95 KB)
FDB9503L-F085
440.95 KB
P-channel power mosfet.
📁 Related Datasheet
FDB9403_F085 - N-Channel MOSFET
(Fairchild Semiconductor)
FDB9403_F085 N-Channel Power Trench® MOSFET
Aug
FDB9403_F085
N-Channel Power Trench® MOSFET
40V, 110A, 1.2mΩ
Features
Typ rDS(on) = 1mΩ at VGS = 1.
FDB9406-F085 - N-Channel MOSFET
(ON Semiconductor)
FDB9406-F085 N-Channel PowerTrench® MOSFET
FDB9406-F085
N-Channel PowerTrench® MOSFET
40 V, 110 A, 1.8 mΩ
D
D
Features
Typ RDS(on) = 1.31mΩ at V.
FDB9406_F085 - N-Channel MOSFET
(Fairchild Semiconductor)
FDB9406_F085 N-Channel PowerTrench® MOSFET
June 2014
FDB9406_F085
N-Channel PowerTrench® MOSFET
40 V, 110 A, 1.8 mΩ
Features
Typ RDS(on) = 1.31m.
FDB9409-F085 - N-Channel Power MOSFET
(ON Semiconductor)
FDB9409-F085 N-Channel PowerTrench® MOSFET
FDB9409-F085
N-Channel PowerTrench® MOSFET
40 V, 80 A, 3.5 mΩ
Features
Typical RDS(on) = 2.5 mΩ at VGS .
FDB016N04AL7 - N-Channel MOSFET
(Fairchild Semiconductor)
FDB016N04AL7 N-Channel PowerTrench® MOSFET
June 2014
FDB016N04AL7
N-Channel PowerTrench® MOSFET
40 V, 306 A, 1.6 mW
Features
• RDS(on) = 1.16 mW (T.
FDB024N04AL7 - MOSFET
(Fairchild Semiconductor)
FDB024N04AL7 N-Channel PowerTrench® MOSFET
June 2014
FDB024N04AL7
N-Channel PowerTrench® MOSFET
40 V, 219 A, 2.4 mΩ
Features
• RDS(on) = 2.0 mΩ (Ty.
FDB024N06 - N-Channel MOSFET
(Fairchild Semiconductor)
FDB024N06 — N-Channel PowerTrench® MOSFET
FDB024N06
N-Channel PowerTrench® MOSFET
60 V, 265 A, 2.4 mΩ
November 2013
Features
• RDS(on) = 1.8 mΩ (Ty.
FDB024N08BL7 - MOSFET
(Fairchild Semiconductor)
FDB024N08BL7 N-Channel PowerTrench® MOSFET
June 2014
FDB024N08BL7
N-Channel PowerTrench® MOSFET
80 V, 229 A, 2.4 mΩ
Features
• RDS(on) = 1.7 mΩ ( T.