FDMC2610 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, UltraFET Trench 200 V, 9.5 A, 200 mW FDMC2610 General .
This N. Channel MOSFET is a rugged gate version of onsemi‘s advanced POWERTRENCH® process.

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Datasheet Specifications

Part number: FDMC2610
Manufacturer: ON Semiconductor ↗
File Size: 315.51 KB
Datasheet: FDMC2610-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max RDS(on) = 200 mW at VGS = 10 V, ID = 2.2 A
* Max RDS(on) = 215 mW at VGS = 6 V, ID = 1.5 A
* Low Profile
* 1 mm Max in a Power 33
* Pb

FDMC2610 Distributors

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FDMC2610 N-Channel MOSFET ON Semiconductor

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