FDMC89521L Dual N-Channel MOSFET

ON Semiconductor

Description

MOSFET * Dual N-Channel, POWERTRENCH) 60 V, 8.2 A, 17 mW FDMC89521L General .
This device includes two 60 V N. Channel MOSFETs in a dual Power 33 (3 mm x 3 mm MLP) package.

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Datasheet Specifications

Part number: FDMC89521L
Manufacturer: ON Semiconductor ↗
File Size: 266.57 KB
Datasheet: FDMC89521L-ONSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* Max rDS(on) = 17 mW at VGS = 10 V, ID = 8.2 A
* Max rDS(on) = 27 mW at VGS = 4.5 V, ID = 6.7 A
* Termination is Lead
* free

Applications

* Battery Protection
* Load Switching
* Bridge Topologies MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDS Drain to Source Voltage 60 V VGS Gate to Source Voltage ±20 V ID Drain Current A
* Continuous TA = 25°C

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FDMC89521L Dual N-Channel MOSFET ON Semiconductor

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