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FDMS2572 N-Channel MOSFET

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Description

MOSFET * N-Channel, UltraFET Trench 150 V, 27 A, 47 mW FDMS2572 General .
UItraFETt devices combine characteristics that enable benchmark efficiency in power conversion applications.

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Features

* Max rDS(on) = 47 mW at VGS = 10 V, ID = 4.5 A
* Max rDS(on) = 53 mW at VGS = 6 V, ID = 4.5 A
* Low Miller Charge
* Optimized Efficiency at High Frequencies
* UIS Capability (Single Pulse and Repetitive Pulse)
* This Device is Pb
* Free and is R

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