FDMS4435BZ

P-Channel MOSFET

ON Semiconductor

FDMS4435BZ Features

* Max rDS(on) = 20 mW at VGS =

* 10 V, ID =

* 9.0 A

* Max rDS(on) = 37 mW at VGS =

* 4.5 V, ID =

* 6.5 A

* Extended VGSS range (

* 25 V) for battery applications

* High Performance Trench Technology for Extremely Low rDS(on)

FDMS4435BZ General Description

This P

*Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

*state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

FDMS4435BZ Datasheet (410.58 KB)