FDPC8016S Datasheet - ON Semiconductor

Dual N-Channel MOSFET

FDPC8016S Features

* Q1: N-Channel

* Max RDS(on) = 3.8 mW at VGS = 10 V, ID = 20 A

* Max RDS(on) = 4.7 mW at VGS = 4.5 V, ID = 18 A Q2: N-Channel

* Max RDS(on) = 1.4 mW at VGS = 10 V, ID = 35 A

* Max RDS(on) = 1.7 mW at VGS = 4.5 V, ID = 32 A

* Low Inductance Packaging Shortens Ri

FDPC8016S General Description

This device includes two specialized N *Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power effic.

FDPC8016S Datasheet (290.32 KB)