FDPC8016S - Dual N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDPC8016S
Manufacturer	ON Semiconductor ↗
File Size	290.32 KB
Description	Dual N-Channel MOSFET
Datasheet	FDPC8016S-ONSemiconductor.pdf

FDPC8016S Product details

Description

This device includes two specialized N Channel MOSFETs in a dual package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.

Features

Q1: N-Channel.
Max RDS(on) = 3.8 mW at VGS = 10 V, ID = 20 A.
Max RDS(on) = 4.7 mW at VGS = 4.5 V, ID = 18 A Q2: N-Channel.
Max RDS(on) = 1.4 mW at VGS = 10 V, ID = 35 A.
Max RDS(on) = 1.7 mW at VGS = 4.5 V, ID = 32 A.
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.
These Devices are Pb.

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Published: Dec 25, 2023 |