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FDS6690A

N-Channel MOSFET

FDS6690A Features

* 11 A, 30 V. RDS(ON) = 12.5 mΩ @ VGS = 10 V RDS(ON) = 17.0 mΩ @ VGS = 4.5 V

* Fast switching speed

* Low gate charge

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability DDDD DD DD SO-8 Pin 1 SO-8

FDS6690A General Description

This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applica.

FDS6690A Datasheet (314.30 KB)

Preview of FDS6690A PDF

Datasheet Details

Part number:

FDS6690A

Manufacturer:

ON Semiconductor ↗

File Size:

314.30 KB

Description:

N-channel mosfet.

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TAGS

FDS6690A N-Channel MOSFET ON Semiconductor

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