FDS6692A N-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDS6692A N-Channel PowerTrench® MOSFET January 2010 FDS6692A N-Channel PowerTrench® MOSFET 30V, 9A, 11.5mΩ .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number: FDS6692A
Manufacturer: Fairchild Semiconductor
File Size: 372.09 KB
Datasheet: FDS6692A-FairchildSemiconductor.pdf
Description: N-Channel PowerTrench MOSFET

Features

* RDS(ON) = 11.5mΩ, VGS = 10V, ID = 9A
* RDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 8.2A
* High performance trench technology for extremely low RDS(ON)

Applications

* DC/DC converters DD D D SO-8 S SSG 54 63 72 81 ©2010 Fairchild Semiconductor Corporation FDS6692A Rev. A2 1 www. fairchildsemi. com FDS6692A N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage

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FDS6692A N-Channel PowerTrench MOSFET Fairchild Semiconductor

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