FDS6699S Datasheet (ON Semiconductor)

FDS6699S, N-Channel MOSFET

The FDS6699S is designed to replace a single SO *8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(on) and low gate charge.

The FDS6699S includes an integrated Schottky diode using onsemi’

FDS6699S Features

* 21 A, 30 V

* Max RDS(on) = 3.6 mW at VGS = 10 V

* Max RDS(on) = 4.5 mW at VGS = 4.5 V

* Includes SyncFET Schottky Body Diode

* High Performance Trench Technology for Extremely Low RDS(on) and Fast Switching

* High Power and Current Handling Capabilit