FDS6699S N-Channel MOSFET

ON Semiconductor

Description

SyncFETt * N-Channel, POWERTRENCH) 30 V, 21 A, 3.6 mW FDS6699S General .
The FDS6699S is designed to replace a single SO. 8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

📥 Download Datasheet

FDS6699S Datasheet Preview — Preview of FDS6699S PDF

Datasheet Specifications

Part number: FDS6699S
Manufacturer: ON Semiconductor ↗
File Size: 197.93 KB
Datasheet: FDS6699S-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 21 A, 30 V
* Max RDS(on) = 3.6 mW at VGS = 10 V
* Max RDS(on) = 4.5 mW at VGS = 4.5 V
* Includes SyncFET Schottky Body Diode
* High Performance Trench Technology for Extremely Low RDS(on) and Fast Switching
* High Power and Current Handling Capabilit

Applications

* Synchronous Rectifier for DC/DC Converters
* Notebook Vcore Low Side Switch
* Point of Load Low Side Switch MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol VDSS VGSS ID Parameter Drain
* Source Voltage Gate
* Source Voltage Drain Current

FDS6699S Distributors

📁 Related Datasheet

FDS6690 FDS6690A FDS6690AS FDS6690S FDS6692 FDS6692A

📌 All Tags

FDS6699S N-Channel MOSFET ON Semiconductor

ON Semiconductor FDS6699S-like datasheet