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FFSD0465A Silicon Carbide Schottky Diode

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Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 4 A, 650 V, D1, DPAK FFSD0465A .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Features

* Max Junction Temperature 175°C
* Avalanche Rated 25 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* This Device is Pb
* Free, Halogen Free/BFR Free an

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VRRM Peak Repetitive Reverse Voltage 650 V EAS Single Pulse Avalanche Energy (Note 1) 25 mJ IF Continu

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