FFSD0865B Datasheet (ON Semiconductor) - Silicon Carbide Schottky Diode

FFSD0865B, Silicon Carbide Schottky Diode

Silicon Carbide (SiC) Schottky Diode EliteSiC, 8 A, 650 V, D2, DPAK FFSD0865B Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.

No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.

System benefits include highest efficiency, faster operating frequenc

FFSD0865B Features

* Max Junction Temperature 175°C

* Avalanche Rated 33 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery/No Forward Recovery

* These Devices are Pb

* Free, Halogen Free/BFR Free