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FFSD0865B Silicon Carbide Schottky Diode

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Description

Silicon Carbide (SiC) Schottky Diode * EliteSiC, 8 A, 650 V, D2, DPAK FFSD0865B Silicon Carbide (SiC) Schottky Diodes use a completely new t.

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Features

* Max Junction Temperature 175°C
* Avalanche Rated 33 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* These Devices are Pb
* Free, Halogen Free/BFR Free

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (TJ = 25°C, IL(pk) = 11.5 A, L = 0.5 mH, V = 50 V) VRRM E

FFSD0865B Distributors

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